The switching speed of a power MOSFET charge-controlled device depends on the speed with which an associated gate driver circuit can charge its input capacitance. For the last 20 years, many excellent ...
In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize ...
V (BR)DSS (sometimes called BVDSS) is the drain-source voltage at which no more than the specified drain current will flow at the specified temperature and with zero gate-source voltage. This tracks ...
Measuring the actual collector-emitter breakdown voltage is practically impossible without destroying the device. Therefore, BVCES is the collector-emitter voltage at which no more than the specified ...
The experimental detection of negative capacitance in ferroelectrics rekindles hopes that the phenomenon could be used to further push the miniaturization of conventional transistors. Ferroelectrics ...
The capacitance of a classical conductor is determined solely by its geometry. When charged, the electrons distribute in space in a manner that minimizes their electrostatic energy. Quantum mechanics ...
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