Researchers from Cambridge University's Microelectronics Research Centre and Hitachi Cambridge Laboratory made progress on building a single-electron memory in CMOS. The group has put together a 3 X 3 ...

The AEFuse embedded, nonvolatile memory cores include what is said to be the first multiple-times-programmable (MTP) fuse fabricated in standard 0.25 µm and 0.18 µm CMOS processes. Offered as a ...

Practically since its founding over eight years ago, Automation World has covered the technology and applications of the connected world, now dubbed the “Internet of Things.” The most recent example ...

Alliance Memory announced the expansion of its line of legacy low-power CMOS SRAMs with a new 8M IC (512K x 16 bit) in the 48-pin 12-mm by 20-mm TSOP-I package. Available from a very limited number of ...

Researchers have announced the demonstration of high-speed spin-orbit-torque magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. Researchers at Tohoku University have ...

Non-volatile bistable memory circuits pave the way for highly energy-efficient CMOS logic systems. Non-volatile bistable memory circuits being developed by Satoshi Sugahara and his team at Tokyo Tech ...