A tiny GeSi electro-absorption modulator with energy consumption at the femtojoule-per-bit level represents a step towards bringing photonics ever closer to computer chips. The demand for data ...
A new publication from Opto-Electronic Advances; DOI 10.29026/oea.2022.200093 discusses dual epsilon-near-zero effect assisted broadband electro-optic modulation. With the continuous and rapid ...
WASHINGTON — Using organic DAST crystals pumped with mid-IR pulses, researchers have created an exceptionally strong terahertz (THz) field that can directly drive a large change in transmission of a ...
Achieving a net data rate of 400Gb/s per lane, imec’s GeSi EAM heralds a new generation of compact, high-bandwidth, low-latency, and energy-efficient modulators – tailored for short-reach, scale-up ...
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